Gukura kwa kristu ya semiconductor
Igice cya semiconductor kizwi nkigisekuru cya kabiri cyibikoresho bya semiconductor, ugereranije nigisekuru cya mbere cyibikoresho bya semiconductor, hamwe ninzibacyuho ya optique, umuvuduko mwinshi wa elegitoronike hamwe nubushyuhe bwo hejuru, kurwanya imirasire nibindi biranga, mumuvuduko mwinshi cyane, ultra-high inshuro, imbaraga nke, urusaku ruke ibihumbi nu muzunguruko, cyane cyane ibikoresho bya optoelectronic hamwe nububiko bwamafoto afite ibyiza byihariye, abahagarariye cyane ni GaAs na InP.
Gukura kwa semiconductor compound kristal imwe (nka GaAs, InP, nibindi) bisaba ibidukikije bikabije, harimo ubushyuhe, ubuziranenge bwibikoresho byera hamwe nubwiza bwikura.PBN kuri ubu ni icyombo cyiza cyo gukura kwa semiconductor compound kristal imwe.Kugeza ubu, uburyo bwo gukura bwa semiconductor uburyo bumwe bwo gukura bwa kristu ahanini burimo uburyo bwo gukurura kashe itaziguye (LEC) hamwe na vertical gradient solidification method (VGF), bihuye na Boyu VGF hamwe na LEC y'ibicuruzwa byingenzi.
Mubikorwa bya synthesis ya polycrystalline, kontineri ikoreshwa mugutwara gallium yibanze igomba kuba idafite ihindagurika kandi igacika ku bushyuhe bwinshi, bisaba ko hasukurwa cyane muri kontineri, nta kwinjiza umwanda, no kuramba kuramba.PBN irashobora kuzuza ibisabwa byose byavuzwe haruguru kandi ni icyombo cyiza cyo gukora polycrystalline.Ubwato bwa Boyu PBN bwakoreshejwe cyane muri tekinoroji.
